View FDS267001_1102116.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS2670
August 2001
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
200 20
(Note 1a)
Units
V V A W
3.0 20 2.5 1.2 1.0 3.2 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
dv/dt TJ, TSTG
Peak Diode Recovery dv/dt
(Note 3)
V/ns C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDS2670 Device FDS2670 Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDS2670 Rev C1(W)
FDS2670
Electrical Characteristics
Symbol
WDSS IAR
TA = 25C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VDD = 100 V, ID = 3.0 A
Min
Typ
Max Units
375 3.0 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 160 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 200 214 1 100 -100 V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
2
4 -10 100 205
4.5
V mV/C
ID = 250 A, Referenced to 25C VGS = 10 V, ID = 3.0 A VGS =10 V, ID =3.0 A, TJ =125C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 3.0 A
130 275
m A
20 15
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 100 V, f = 1.0 MHz
V GS = 0 V,
1228 112 17
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 100 V, VGS = 10 V,
ID = 1 A, RGEN = 6
13 8 30 25
23 16 48 40 43
ns ns ns ns nC nC nC
VDS = 100 V, VGS = 10 V
ID = 3 A,
27 7 10
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward IS = 2.1 A VGS = 0 V, Voltage 2.1
(Note 2)
A V
0.7
1.2
FDS2670 Rev C1(W)
FDS2670
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when 2 mounted on a 1in pad of 2 oz copper
b) 105/W when mounted on a 0.04 in2 pad of 2 oz copper
c) 125/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. ISD 3A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C
FDS2670 Rev C1(W)
FDS2670
Typical Characteristics
20 VGS = 10V 6.5V 15 6.0V
1.6 VGS = 5.5V 1.4
10
1.2
6.0V 6.5V 10.0V
5
1 5.5V
0 0 2 4 6 8 10
0.8 0 4 8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.4
2.5 ID = 3.0A VGS = 10V 2
ID = 1.5 A 0.3
1.5 0.2 1 0.1 TA = 25 C
o
TA = 125 C
o
0.5
0 -50 -25 0 25 50 75 100
o
0 125 150 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 15V 24
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125 C 25 C -55 C
o o o
18 TA = 125 C 12 25 C 6 -55 C
o o o
1
0.1
0.01
0 3 4 5 6 7 8
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS2670 Rev C1(W)
FDS2670
Typical Characteristics
15 ID = 3.0 A 12 100 V 9 VDS = 40V 70
2000 f = 1MHz VGS = 0 V 1500 CISS
1000 6 500 3 COSS 0 0 5 10 15 20 25 30 35 40 0 0 20 CRSS 40 60 80 100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 ID, DRAIN CURRENT (A) 10ms 1 10s DC 0.1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 100ms 1s 100s
Figure 8. Capacitance Characteristics.
100 SINGLE PULSE RJA = 125C/W TA = 25C
80
60
40
20
0.01
0 0.001
0.001 0.1 1 10 100 1000
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5
0.2
RJA(t) = r(t) + RJA R JA = 125C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 1 t1, TIME (sec) 10 100 1000
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
0.01 0.001 0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS2670 Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

▲Up To Search▲

Price & Availability of FDS267001

	To Download FDS267001 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .